M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet - Page 67

• Manufacturer Part Number: M29DW641F70N1
• Description: 64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
• Manufacturer: NUMONYX [Numonyx B.V]

M29DW641F
Table 31.
Address
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00C5h
00B5h
000Ah
0027h
0036h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
Data
CFI Query System Interface Information
V
V
V
V
Typical timeout per single byte/Word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for byte/Word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for Chip Erase = 2
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Description
n
n
times typical
ms
Common Flash Interface (CFI)
n
n
n
times typical
ms
times typical
n
n
times typical
µs
n
µs
256 µs
Value
11.5V
12.5V
16µs
2.7V
3.6V
NA
NA
NA
NA
1s
8s
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