M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet - Page 49

• Manufacturer Part Number: M29DW641F70N1
• Description: 64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
• Manufacturer: NUMONYX [Numonyx B.V]

M29DW641F
Table 18.
1. Sampled only, not 100% tested.
Table 19.
1. In Dual Operations the Supply current will be the sum of I
2. Sampled only, not 100% tested.
I
Symbol
CC3
I
CC1
V
V
I
V
V
V
V
I
CC2
V
I
I
PPH
LKO
LO
PP
OH
LI
OL
IH
ID
IL
Symbol
(1)(2)
(1)
C
C
OUT
IN
Input Leakage current
Output Leakage current
Supply current (Read)
Supply current (Standby)
Supply current
(Program/Erase)
Input Low voltage
Input High voltage
Voltage for Fast Program
Acceleration
Current for Fast Program
Acceleration
Output Low voltage
Output High voltage
Identification voltage
Program/Erase Lockout
Supply voltage
Device capacitance
DC characteristics
Parameter
Input capacitance
Output capacitance
Parameter
(1)
Controller active
Program/Erase
V
V
E = V
RP = V
Test condition
0V V
E = V
CC
CC
0V V
I
OH
I
OL
f = 6MHz
Test condition
= 2.7V ±10%
=2.7V ±10%
IL
= –100
= 1.8mA
V
CC
OUT
, G = V
V
CC
IN
CC1
OUT
IN
±0.2V,
±0.2V
(read) and I
V
= 0V
V
= 0V
V
V
CC
µ
V
CC
A
PP
PP
IH
IL
V
,
/WP =
or V
/WP =
PPH
IH
CC3
(program/erase).
Min
V
0.7V
DC and AC parameters
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
Max
12
V
6
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
pF
pF
Unit
mA
mA
mA
mA
49/80
µ
µ
µ
V
V
V
V
V
V
V
A
A
A