M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet - Page 40

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M29DW641F70N1

Manufacturer Part Number
M29DW641F70N1
Description
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
Command interface
40/80
Table 12.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Chip Erase
Block Erase (32 KWords)
Erase Suspend Latency Time
Word
Program
Chip Program (Word by Word)
Chip Program (Double Word)
Chip Program (Quadruple Word)
Program Suspend Latency Time
Program/Erase cycles (per Block)
Data Retention
program/erase cycles.
Single or Multiple Word Program
(1, 2 or 4 Words at-a-time)
Program, Erase Times and Program, Erase Endurance cycles
Parameter
100,000
Min
20
Typ
0.8
80
10
40
20
10
(1)(2)
CC
CC
.
after 100,00
Max
400
200
200
100
50
50
6
4
(4)
(4)
(3)
M29DW641F
(3)
(3)
(3)
(3)
(2)
Cycles
Years
Unit
µs
µs
µs
s
s
s
s
s

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