MT48H16M32LFCJ-75 MICRON [Micron Technology], MT48H16M32LFCJ-75 Datasheet - Page 46

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MT48H16M32LFCJ-75

Manufacturer Part Number
MT48H16M32LFCJ-75
Description
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Manufacturer
MICRON [Micron Technology]
Datasheet
Electrical Specifications
Absolute Maximum Ratings
Table 9:
Table 10:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
Parameter/Condition
Voltage on V
Voltage on inputs, NC or I/O balls relative to V
Storage temperature plastic
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage:
Output low voltage:
Input leakage current:
Any input 0V ≤ V
Operating temperature
Commercial
Industrial
DD
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on pages 51–52
/V
IN
DD
≤ V
Q supply relative to V
Voltage/Temperature
DD
(All other balls not under test = 0V)
Stresses greater than those listed in Table 9 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
SS
SS
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
46
Symbol
V
V
V
V
V
DD
V
T
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
OH
I
OL
IH
A
A
IL
I
Q
Min
–0.3
–0.3
–55
0.8 × V
0.9 × V
Min
–0.3
–1.0
–40
1.7
1.7
0
DD
DD
Q
Q V
Electrical Specifications
DD
Max
+150
+2.7
+2.7
Max
+0.3
1.95
1.95
+70
+85
Q + 0.3
0.2
1.0
©2005 Micron Technology, Inc. All rights reserved.
Units
µA
°C
V
V
V
V
V
V
Units
°C
V
Notes
22
22
28
28

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