MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 21

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MT46V16M8TG-8L

Manufacturer Part Number
MT46V16M8TG-8L
Description
DOUBLE DATA RATE DDR SDRAM
Manufacturer
MICRON [Micron Technology]
Datasheet
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
NOTE: 1. DO n (or x or b or g) = data-out from column n (or column x or column b or column g).
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
2. Burst length = 2 or 4 or 8 (if 4 or 8, the following burst interrupts the previous).
3. n' or x' or b' or g' indicates the next data-out following DO n or DO x or DO b or DO g, respectively.
4. READs are to an active row in any bank.
5. Shown with nominal
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
t
CL = 2
AC,
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 2.5
t
DQSCK, and
Random READ Accesses
T2
Figure 10
READ
READ
Bank,
Bank,
Col b
Col b
T2n
T2
t
DQSQ.
21
DO
n
T2n
T3
DO
DO
n'
n
T3n
READ
Bank,
READ
Bank,
Col g
Col g
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
DO
DO
n'
x
T3n
T4
DO
DO
x'
x
128Mb: x4, x8, x16
T4n
T4
NOP
NOP
DO
DO
x'
b
TRANSITIONING DATA
T4n
T5
DDR SDRAM
PRELIMINARY
DO
DO
b'
b
©2001, Micron Technology, Inc.
T5n
T5
NOP
NOP
DO
DO
b'
g
T5n

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