MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 20

• Manufacturer Part Number: MT46V16M8TG-8L
• Description: DOUBLE DATA RATE DDR SDRAM
• Manufacturer: MICRON [Micron Technology]

128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
NOTE: 1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
CL = 2
NOP
NOP
T1
T1
CL = 2.5
Nonconsecutive READ Bursts
t
AC,
t
DQSCK, and
NOP
NOP
T2
T2
Figure 9
DO
n
t
T2n
T2n
DQSQ.
20
DO
n
READ
Bank,
READ
Bank,
Col b
Col b
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
T3n
DON’T CARE
T4
T4
NOP
NOP
128Mb: x4, x8, x16
TRANSITIONING DATA
T5
T5
DDR SDRAM
NOP
NOP
PRELIMINARY
DO
b
T5n
T5n
©2001, Micron Technology, Inc.
DO
b
T6
T6
NOP
NOP