S29CD016G SPANSION, S29CD016G Datasheet - Page 49

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S29CD016G

Manufacturer Part Number
S29CD016G
Description
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory
Manufacturer
SPANSION
Datasheet

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Notes:
1. See
2. See
November 5, 2004 S29CD016_00_A4
Table 27 on page 77
“DQ3: Sector Erase Timer” on page 65r
Sector Erase and Program Suspend Command
Automatic sector erase operations begin on the rising edge of the WE# or CE#
pulse of the last sector erase command issued, and once the 80 µs time-out win-
dow expires. The status of the sector erase operation is determined three ways:
Further status of device activity during the sector erase operation is determined
using toggle bit DQ2 (refer to
When the Embedded Erase algorithm is complete, the device returns to reading
array data, and addresses are no longer latched. Note that an address change is
required to begin read valid array data.
Figure 5
sequence and bus operation. Refer to
Figure 21, on page 78
The Sector Erase and Program Suspend command allows the user to interrupt a
Sector Erase or Program operation and perform data read or programs in a sector
that is not being erased or to the sector where a programming operation was ini-
tiated. This command is applicable only during the Sector Erase and
Programming operation, which includes the time-out period for Sector Erase.
Data# polling of the DQ7 pin
Checking the status of the toggle bit DQ6
Checking the status of the RY/BY# pin
illustrates the Embedded™ Erase Algorithm, using a typical command
A d v a n c e
and
Table 28 on page 83
No
and
Command Sequence
Figure 5. Erase Operation
Erasure Completed
I n f o r m a t i o n
Figure 22, on page 79
from System
Write Erase
for more information.
Data = FFh?
“DQ2: Toggle Bit II” on page
Data Poll
START
S29CD016G
for erase command sequence.
Yes
Table 29 on page 85
Embedded
Erase
algorithm
in progress
for timing diagrams.
63).
for parameters, and
49

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