S29CD016G SPANSION, S29CD016G Datasheet - Page 46

• Manufacturer Part Number: S29CD016G
• Description: 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory
• Manufacturer: SPANSION

Note: See Tables 8 and 9 for program command sequence.
46
in the standard program command sequence, resulting in faster total program-
ming time.
requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock By-
pass Reset commands are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle
must contain the data 90h; the second cycle the data 00h. Addresses are don’t
care for both cycles. The device then returns to reading array data.
Figure 4
page 85
for timing diagrams.
Unlock Bypass Entry Command
The Unlock Bypass command, once issued, is used to bypass the “unlock” se-
quence for program, chip erase, and CFI commands. This feature permits slow
PROM programmers to significantly improve programming/erase throughput
since the command sequence often requires microseconds to execute a single
write operation. Therefore, once the Unlock Bypass command is issued, only the
two-cycle program and erase bypass commands are required. The Unlock Bypass
Command is ignored if the SecSi sector is enabled. To return back to normal op-
eration, the Unlock Bypass Reset Command must be issued.
for parameters, and
illustrates the algorithm for the program operation. See
Figure 19, on page 58
Increment Address
Figure 4. Program Operation
A d v a n c e
in progress
Figure 21, on page 78
Embedded
algorithm
Program
S29CD016G
No
and
Command Sequence
Figure 20, on page 59
Write Program
I n f o r m a t i o n
Last Address?
Programming
from System
Verify Data?
Completed
Data Poll
START
Yes
Yes
and
Figure 22, on page 79
No
Table 29 on
show the
S29CD016_00_A4 November 5, 2004