k4j55323qi Samsung Semiconductor, Inc., k4j55323qi Datasheet - Page 28

• Manufacturer Part Number: k4j55323qi
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QI
Nonconsecutive READ Bursts
COMMAND
COMMAND
ADDRESS
ADDRESS
RDQS
RDQS
NOTE
/CK
CK
/CK
CK
DQ
DQ
:
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Three subsequent elements of data-out appear in the programmed order following DQ b.
5. Shown with nominal t
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
7. RDQS will start driving high one half-clock cycle prior to the first falling edge of RDQS.
Bank a,
Bank a,
READ
READ
Col n
Col n
T0
T0
CL = 8
CL = 8
NOP
NOP
T7
T1
AC
and t
DQSQ.
NOP
NOP
T8
T7
DO
n
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T8n
Bank a,
Bank a,
READ
READ
Col b
Col b
T9
T8
DON’T CARE
DO
n
T9n
T8n
NOP
NOP
T10
T9
256M GDDR3 SDRAM
TRANSITIONING DATA
Rev. 1.3 May 2007
NOP
NOP
T17
T10
DO
b
T17n
T10n
NOP
NOP
T18
T11
DO
b