k4j55323qi Samsung Semiconductor, Inc., k4j55323qi Datasheet - Page 27

• Manufacturer Part Number: k4j55323qi
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QI
Consecutive READ Bursts
COMMAND
ADDRESS
RDQS
/CK
CK
NOTE :
DQ
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Three subsequent elements of data-out appear in the programmed order following DQ b.
5. Shown with nominal t
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
7. RDQS will start driving high one half-clock cycle prior to the first falling edge of RDQS.
Bank a,
READ
Col n
T0
AC
Bank a,
READ
Col b
and t
T2
CL = 8
DQSQ.
NOP
T7
27 / 54
DON’T CARE
NOP
T8
DO
n
T8n
256M GDDR3 SDRAM
TRANSITIONING DATA
NOP
T9
Rev. 1.3 May 2007
T9n
NOP
T10
DO
b
T10n