fds4070n704 Fairchild Semiconductor, fds4070n704 Datasheet - Page 2

• Manufacturer Part Number: fds4070n704
• Description: N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Avalanche Ratings
E
I
DSS
GSSF
GSSR
d(on)
r
d(off)
f
AS
FS
GS(th)
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
AS
GS(th)
DSS
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Parameter
(Note 2)
(Note 2)
(Note 2)
T
A
V
I
V
V
V
V
I
V
V
V
V
f = 1.0 MHz
V
V
V
V
Single Pulse, V
D
D
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
DS
DS
DD
GS
DS
GS
= 250 µA, Referenced to 25°C
= 250 µA, Referenced to 25 °C
= 0 V,
= 32 V,
= 20 V, V
= –20 V, V
= V
= 10 V, I
= 10 V, I
= 10 V, I
= 20 V,
= 20 V,
= 10 V,
= 20 V,
= 10 V
Test Conditions
GS
,
D
D
=15.3A, T
I
V
I
V
I
D
D
D
I
R
D
= 15.3 A
DD
D
GS
DS
DS
GS
GEN
= 250 µA
= 250 µA
= 15.3 A
= 15.3 A,
= 1 A,
=40V, I
= 0 V
= 0 V
= 0 V
= 0 V,
= 6 Ω
J
D
=125°C
=15.3A
Min Typ Max Units
40
2
2819
600
291
3.9
7.5
42
–8
52
16
12
41
29
47
15
14
5
–100
15.3
100
310
11
29
22
66
46
67
FDS4070N7 Rev B2 (W)
1
5
7
mΩ
mV/°C
mV/°C
mJ
µA
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
V
V
S