fds4070n704 Fairchild Semiconductor, fds4070n704 Datasheet
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fds4070n704
Manufacturer Part Number
fds4070n704
Description
N-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS4070N704.pdf
(8 pages)
FDS4070N7
40V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
Applications
• Synchronous rectifier
• DC/DC converter
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
Device Marking
STG
N-Channel
FDS4070N7
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
DS(ON)
MOSFET
in a small package.
– Continuous
– Pulsed
FDS4070N7
has
Device
Parameter
been
designed
MOSFET
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1)
Features
• 15.3 A, 40 V. R
• High performance trench technology for extremely
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package: Enhanced thermal
low R
performance in industry-standard package size
DS(ON)
5
6
7
8
Tape width
DS(ON)
–55 to +150
12mm
Drain Contact
Ratings
Bottom-side
± 20
15.3
3.0
0.5
40
60
40
= 7 mΩ @ V
January 2004
4
3
2
1
GS
FDS4070N7 Rev B2 (W)
= 10 V
2500 units
Quantity
Units
°C/W
°C
W
V
V
A