sfi9630 Fairchild Semiconductor, sfi9630 Datasheet - Page 2

• Manufacturer Part Number: sfi9630
• Description: Advanced Power Mosfet
• Manufacturer: Fairchild Semiconductor

O
O
O
O
O
SFW/I9630
4
2
3
5
1
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
BV
BV/ T
V
R
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=20mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
SD
C
t
t
V
I
I
C
C
Q
Q
I
GS(th)
DS(on)
Q
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
t
SD
oss
t
S
rr
DSS
iss
rss
fs
r
gs
gd
f
rr
< _
g
-6.5A, di/dt 400A/ s, V
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
=-6.5A, V
< _
DD
Characteristic
Characteristic
=-50V, R
DD
< _
BV
G
=27
DSS
, Starting T
*
(T
, Starting T
C
=25
< _
O
O
1
4
o
J
C unless otherwise specified)
=25
J
Min.
=25
Min.
-200
-2.0
o
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
C
o
C
-0.17
Typ.
Typ.
13.6
0.96
740
125
160
4.2
5.8
49
14
22
41
17
29
--
--
--
--
--
--
--
--
--
--
Max. Units
Max. Units
-100
-100
-6.5
-5.0
-4.0
100
0.8
965
185
-26
-10
75
35
55
90
45
36
--
--
--
--
--
--
--
V/
nA
nC
ns
pF
ns
A
V
V
V
o
A
C
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
G
DS
=-250 A
=-6.5A
F
=25
=25
/dt=100A/ s
=12
=-5V,I
=-200V
=-160V,T
=-40V,I
=-160V,V
=0V,I
=-30V
=30V
=-10V,I
=0V,V
=-100V,I
See Fig 13
Test Condition
Test Condition
o
o
POWER MOSFET
C,I
C,I
See Fig 5
P-CHANNEL
D
D
S
F
DS
=-250 A
=-6.5A,V
=-6.5A
=-250 A
D
D
=-25V,f =1MHz
=-3.3A
=-3.3A
D
C
GS
=-6.5A,
See Fig 7
=125
=-10V,
o
GS
C
O
O
=0V
4
4
O
O
4
4
O
O
O
5
5
4