sfi9630 Fairchild Semiconductor, sfi9630 Datasheet

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sfi9630

Manufacturer Part Number
sfi9630
Description
Advanced Power Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.SFI9630.pdf (7 pages)

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
sfi9630-TLTU
Manufacturer:
FSC
Quantity:
2 000
©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
T
When mounted on the minimum pad size recommended (PCB Mount).
Symbol
Symbol
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
Low R
J
dv/dt
R
R
R
V
V
E
E
I
I
P
, T
I
T
DM
DSS
AR
D
GS
AS
AR
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
: 0.581
(Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
A
C
=25
=25
C
C
=25
=100
*
o
o
C)
C)
DS
o
C)
o
= -200V
C)
*
O
O
O
O
O
1
2
1
1
3
Typ.
--
--
--
- 55 to +150
-200
Value
+ _
0.56
-6.5
-4.0
-6.5
-5.0
563
300
-26
1
7.0
3.1
70
BV
R
I
30
3
1. Gate 2. Drain 3. Source
SFW/I9630
D
D
DS(on)
2
-PAK
DSS
= -6.5 A
Max.
1.79
62.5
40
= 0.8
= -200 V
2
1
2
3
I
2
-PAK
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
W
V
A
A
V
A
C
o
C
Rev. B

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sfi9630 Summary of contents

Page 1

... L Purposes, 1/8 “ from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Junction-to-Ambient JA R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation SFW/I9630 BV DSS R DS(on -6 -PAK = -200V Gate 2. Drain 3. Source ...

Page 2

SFW/I9630 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : - 5.0 V Bottom : - 4 ...

Page 4

SFW/I9630 Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 @ Notes : 0.8 -75 -50 - 100 Junction Temperature [ J Fig 9. Max. Safe Operating Area ...

Page 5

P-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50K 12V 200nF 300nF V GS -3mA R 1 Current Sampling ( Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out ...

Page 6

SFW/I9630 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) DUT ) DUT ) ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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