lrs1830 Sharp Microelectronics of the Americas, lrs1830 Datasheet - Page 29

• Manufacturer Part Number: lrs1830
• Description: Stacked Chip 256m X16 Boot Block Flash And 32m X16 Scram
• Manufacturer: Sharp Microelectronics of the Americas

6.6.4 Block Erase, Bank Erase, (Page Buffer) Program Performance
Notes:
t
t
t
t
t
Symbol
WHQV1
t
WHQV2
t
WHQV3
t
WHRH1
t
WHRH2
t
1. Typical values measured at V
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE or F-CE going high) until SR.7 going “1” or F-RY/BY
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
EHQV1
EHQV2
EHQV3
t
EHRH1
EHRH2
t
t
WMB
ERES
WPB
set. Subject to change based on device characterization.
going High-Z.
t
sharp
ERES
/
/
/
/
/
4K-Word Parameter Block Program
Time
32K-Word Main Block Program
Time
Word Program Time
4K-Word Parameter Block Erase
Time
32K-Word Main Block Erase Time
Bank Erase Time
(Page Buffer) Program Suspend Latency
Time to Read
Block Erase Suspend Latency Time
to Read
Latency Time from Block Erase
Resume Command to Block Erase
Suspend Command
and its sequence is repeated, the block erase operation may not be finished.
Parameter
CC
=3.0V, WP/A
Notes
CC
2
2
2
2
2
2
2
2
2
4
4
5
=3.0V or 12V, and T
L R S1 8 3 0
Page Buffer
Not Used
Not Used
Not Used
Command
is Used or
not Used
Used
Used
Used
-
-
-
-
-
(3)
Min. Typ.
500
WP/A
A
=+25 C. Assumes corresponding lock bits are not
CC
0.03
0.38
0.24
0.05
0.3
0.6
11
80
7
5
5
=V
(1)
(T
ACCH1
A
= -30°C to +85°C, V
Max.
0.12
200
100
700
0.3
2.4
10
20
1
4
5
(2)
Min. Typ.
500
WP/A
CC
0.04
0.02
0.31
0.17
0.2
0.5
65
9
5
5
5
=V
CC
(1)
ACCH2
= 2.7V to 3.1V)
Max.
0.12
0.06
185
700
0.5
90
10
20
1
4
5
(2)
Unit
s
s
s
s
s
s
s
s
s
s
s
s
26