bga735l16 Infineon Technologies Corporation, bga735l16 Datasheet - Page 5

• Manufacturer Part Number: bga735l16
• Description: High Linearity Tri-band Umts Lna
• Manufacturer: Infineon Technologies Corporation

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The BGA735L16 is a highly flexible, high linearity tri-band (2100, 1900/1800/2100, 800/900 MHz) low noise
amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the
BGA735L16 uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-
chip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied.
For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input
and output matching network.
Note: UMTS bands I / II / V is the standard band combination for this product requiring no external output matching
Features
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Figure 1
Type
BGA735L16
Data Sheet
Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode
(800 MHz / 1900 MHz / 2100 MHz)
Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all
bands)
Standby mode (< 2 A typ.)
Output internally matched to 50
Inputs pre-matched to 50
2kV HBM ESD protection
Low external component count
Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
Pb-free (RoHS compliant) package
network.
Description
Block diagram of triple-band LNA
Package
TSLP-16-1
BGA735L16 - Low Power Tri-Band UMTS LNA
Marking
BGA735
5
TSLP-16-1 package
Chip
T1530
V3.0, 2008-08-26
Description