bga735l16 Infineon Technologies Corporation, bga735l16 Datasheet - Page 27

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bga735l16

Manufacturer Part Number
bga735l16
Description
High Linearity Tri-band Umts Lna
Manufacturer
Infineon Technologies Corporation
Datasheet

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Quantity
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Noise Figure
2.21
V
Power Gain
Data Sheet
CC
= 2.8 V,
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
2.11
1
19
18
17
16
15
14
13
−40
Measured Performance High Band (Band I) High Gain Mode vs. Temperature
V
|S
NF
GS
21
2.12
−20
| = f (
= 2.8 V,
= f (
2.13
T
Frequency [GHz]
f
0
A
)
)
V
EN1
20
2.14
T
A
Measured Performance High Band (Band I) High Gain Mode vs. Temperature
= 2.8 V,
[°C]
40
2.15
60
V
2.16
EN2
80
= 2.8 V,
2.17
100
f
BGA735L16 - Low Power Tri-Band UMTS LNA
Input Compression
= 2140 MHz
27
Supply Current
−10
−12
−14
−2
−4
−6
−8
2.11
0
5.5
4.5
3.5
2.5
−40
5
4
3
2
2.12
−20
I
CC
P1dB
= f (
2.13
Frequency [GHz]
0
= f (
T
A
20
)
2.14
T
Electrical Characteristics
A
f
)
[°C]
40
2.15
60
V3.0, 2008-08-26
2.16
80
2.17
100

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