bga735l16 Infineon Technologies Corporation, bga735l16 Datasheet - Page 25

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bga735l16

Manufacturer Part Number
bga735l16
Description
High Linearity Tri-band Umts Lna
Manufacturer
Infineon Technologies Corporation
Datasheet

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2.19
V
Power Gain
Noise Figure
Data Sheet
CC
= 2.8 V,
11
10
−10
−11
−40
9
8
7
6
5
−5
−6
−7
−8
−9
−40
Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature
V
|S
GS
NF
−20
21
−20
| = f (
= 0 V,
= f (
0
T
T
0
A
A
V
)
)
EN1
20
T
20
A
T
= 2.8 V,
A
[°C]
[°C]
Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature
40
40
60
V
60
EN2
80
= 0 V,
80
100
100
f
= 1960 MHz
BGA735L16 - Low Power Tri-Band UMTS LNA
Input Compression
25
Supply Current
−10
−12
−14
0.75
0.65
0.55
−2
−4
−6
−8
−40
0.8
0.7
0.6
0.5
0
−40
−20
−20
I
CC
P1dB
= f (
0
0
= f (
T
20
T
A
20
)
A
T
T
Electrical Characteristics
A
[°C]
A
[°C]
40
)
40
60
60
V3.0, 2008-08-26
80
80
100
100

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