bga735l16 Infineon Technologies Corporation, bga735l16 Datasheet - Page 14

• Manufacturer Part Number: bga735l16
• Description: High Linearity Tri-band Umts Lna
• Manufacturer: Infineon Technologies Corporation

2.10.3
Table 12
Parameter
Pass band range
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
P
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
f
1
f1
- f
= P
2
= 1 MHz
f2
= -37 dBm
1)
Measured RF Characteristics UMTS Band IV
Typical Characteristics 2100 MHz Band,
2)
1)
1)
1)
1)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
2110
BGA735L16 - Low Power Tri-Band UMTS LNA
14
Typ.
3.4
0.65
15.8
-7.0
-34
-7
1.1
7
-19
-14
-19
-15
>2.3
-7
-4
-4
6
T
Values
A
= 25 °C,
Max.
2155
V
CC
Measured RF Characteristics Mid Band
= 2.8 V
Unit
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Electrical Characteristics
Note / Test Condition
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
50
50 , high gain mode
50 , low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
high gain mode
low gain mode
V3.0, 2008-08-26