bga735l16 Infineon Technologies Corporation, bga735l16 Datasheet
bga735l16
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Edition 2008-08-26 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008. © All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...
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... BGA735L16 Revision History: 2008-08-26, V3.0 Previous Version: 2008-07-08, V2.1 preliminary Page Subjects (major changes since last revision) 6 Updated value for thermal resistance 8 Added supply current characteristics Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA 3 V3.0, 2008-08-26 ...
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... UMTS bands I, III and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 3.3 UMTS bands I, IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3.4 Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 3.5 Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 4 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 4.1 Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 4.2 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA ° ° V3.0, 2008-08-26 ...
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... Description The BGA735L16 is a highly flexible, high linearity tri-band (2100, 1900/1800/2100, 800/900 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735L16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on- chip as well as matching off chip ...
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... Thermal Resistance Parameter Symbol R Thermal resistance junction thJS to soldering point 2.3 ESD Integrity Table 3 ESD Integrity Parameter Symbol 1) V ESD hardness HBM ESD-HBM 1) According to JESD22-A114 Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Values Min. Max. -0.3 3 -0.3 +0.3 CC -0.3 0.9 4 150 -30 85 -65 150 Value 37 Value (typ ...
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... Logic currents VGS GSL I GSH 2.5 Band Select / Gain Control Truth Table Table 5 Band Select Truth Table, High band VEN1 H VEN2 H Table 6 Gain Control Truth Table, VGS Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA °C A Values Min. Typ. Max. 2.7 2.8 3.0 4.0 3.4 650 0.1 2 1.5 2 ...
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... REF I Supply Current Lowband = 2 REF Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA ° Supply Current Midband REF 100 R ) REF 100 8 Electrical Characteristics Supply current characteristics; T (see Figure 2 on page 31 ...
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... V [V] EN1,2 2.8 Switching Times Table 7 Typical switching times; Parameter Settling time gainstep Settling time bandselect Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA °C A Logic currents -30 ... 85 °C A Symbol Values Min. Typ ...
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... Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA °C, A Symbol Values Min. Typ. 869 875 I 3.4 CCHG I 0.65 CCLG S 16 ...
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... Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA °C, A Symbol Values Min. Typ. 925 I 3.4 CCHG I 0.65 CCLG S 16.1 21HG S -7 ...
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... Input compression point 1) Inband IIP3 - MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA °C, A Symbol Values Min. Typ. 1930 I 3.4 CCHG I 0.65 CCLG S 16 ...
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... Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA °C, A Symbol Values Min. Typ. 1805 1844.9 I 3.4 CCHG I 0.65 CCLG S 16 ...
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... Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA °C, A Symbol Values Min. Typ. 2110 I 3.4 CCHG I 0.65 CCLG S 15.8 21HG S -7 ...
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... Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA = 25 °C, A Symbol Values Min. Typ. 2110 2110 I 4.0 CCHG I 0.65 CCLG S 17.2 21HG S -7 ...
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... Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance Low Band (Band V) High Gain Mode vs. Frequency 2.8 V EN1 EN2 Power Gain wideband −30°C 25°C 85°C 0.89 0 Gainstep HG-LG ...
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... CC GS EN1 |S T Power Gain | = −40 − [°C] A Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Input Compression −10 −12 −14 0. 880 MHz EN2 Supply Current 100 17 Electrical Characteristics P1dB −2 −4 − ...
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... Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency Input Compression −10 −12 − 100 2.8 V EN1 EN2 Power Gain wideband − ...
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... Frequency [GHz Noise Figure = 0.86 0.87 0.88 Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency 0.89 0.9 Input Compression −10 −12 −14 0.89 0.9 19 Electrical Characteristics P1dB − ...
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... T [° Noise Figure = −40 − [°C] A Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA 2 880 MHz EN2 Supply Current 100 Input Compression −10 −12 − 100 20 Electrical Characteristics ...
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... Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency 2 EN1 EN2 Power Gain wideband −30°C 25°C 85°C 1.97 1.98 1. Gainstep HG-LG ...
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... CC GS EN1 |S T Power Gain | = −40 − [°C] A Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Input Compression −10 −12 −14 1.97 1.98 1. 1960 MHz EN2 Supply Current 100 22 Electrical Characteristics P1dB −2 − ...
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... Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency Input Compression −2 −4 −6 −8 −10 −12 − 100 2 ...
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... Frequency [GHz Noise Figure = 1.93 1.94 1.95 1.96 Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency 1.97 1.98 1.99 Input Compression −10 −12 −14 1.97 1.98 1.99 24 Electrical Characteristics P1dB − ...
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... Noise Figure = −40 − [°C] A Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA 1960 MHz EN2 Supply Current 100 Input Compression −10 −12 − 100 25 Electrical Characteristics ...
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... Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance High Band (Band I) High Gain Mode vs. Frequency 2 2.8 V EN1 EN2 Power Gain wideband −30°C 25°C 85°C 2.15 2.16 2. Gainstep HG-LG ...
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... EN1 |S T Power Gain | = −40 − [°C] A Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Input Compression −10 −12 −14 2.15 2. 2140 MHz EN2 Supply Current 100 27 Electrical Characteristics P1dB −2 −4 − ...
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... Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance High Band (Band I) Low Gain Mode vs. Frequency Input Compression −10 −12 − 100 2 2.8 V EN1 EN2 Power Gain wideband − ...
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... Frequency [GHz Noise Figure = 2.11 2.12 2.13 2.14 Frequency [GHz] Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Measured Performance High Band (Band I) Low Gain Mode vs. Frequency 2.15 2.16 2.17 Input Compression −10 −12 −14 2.15 2.16 2.17 29 Electrical Characteristics P1dB − ...
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... T [° Noise Figure = −40 − [°C] A Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA 2 2140 MHz EN2 Supply Current 100 Input Compression −10 −12 − 100 30 Electrical Characteristics ...
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... Note: Package paddle (Pin 0) has grounded. Table 14 Parts List Part Number Part Type L1 ... L3 Chip inductor C1 ... C7 Chip capacitor RREF Chip resistor Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA UMTS bands I, II and V Application Circuit Schematic 10nF 0 GND 5 n/c 4 ...
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... Note: Package paddle (Pin 0) has grounded. Table 15 Parts List Part Number Part Type L1 ... L5 Chip inductor C1 ... C8 Chip capacitor RREF Chip resistor Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA UMTS bands I, III and VIII Application Circuit Schematic . 10nF 0 GND 5 n/c 4 ...
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... Note: Package paddle (Pin 0) has grounded. Table 16 Parts List Part Number Part Type L1 ... L5 Chip inductor C1 ... C7 Chip capacitor RREF Chip resistor Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA UMTS bands I, IV and VIII Application Circuit Schematic . 10nF 0 GND 5 n/c 4 ...
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... RREF 14 RFOUTL 15 RFOUTH 16 RFOUTM Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Application Circuit and Block Diagram Function Package paddle; ground connection for low band LNA and control circuity Not connected Gain step control Supply voltage High band LNA emitter ground ...
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... Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm metallization, gold plated. Board size Figure 6 Cross-section view of application board Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Application Circuit and Block Diagram 35 Application Board V3.0, 2008-08-26 ...
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... Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Application Circuit and Block Diagram 36 Application Board ...
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... Package Footprint 0.225 0.3 0.2 0.3 0.3 Copper 0.35 0.225 0.3 0.2 0.3 0.3 Copper Figure 8 Recommended footprint and stencil layout for the TSLP-16-1 package Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA 0.225 0.3 0.2 0.3 0.2 0.3 0.2 Solder mask Stencil apertures 0.55 0.35 0.225 0.3 0.2 0.3 ...
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... Package Dimensions Top view Pin 1 marking 1) Dimension applies to plated terminals Figure 9 Package outline (top, side and bottom view) Data Sheet BGA735L16 - Low Power Tri-Band UMTS LNA Bottom view +0.01 0.39 -0.03 0.05 MAX 1 0.2 38 Physical Characteristics Package Dimensions 2.3 ±0.05 2 ±0.05 1 ±0.05 ...
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Published by Infineon Technologies AG ...