bga735l16 Infineon Technologies Corporation, bga735l16 Datasheet - Page 13

• Manufacturer Part Number: bga735l16
• Description: High Linearity Tri-band Umts Lna
• Manufacturer: Infineon Technologies Corporation

2.10.2
Table 11
Parameter
Pass band range band III
Pass band range band IX
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
P
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
f
1
f1
- f
= P
2
= 1 MHz
f2
= -37 dBm
1)
Measured RF Characteristics UMTS Bands III / IX
Typical Characteristics 1800 MHz Band,
2)
1)
1)
1)
1)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
1805
1844.9
BGA735L16 - Low Power Tri-Band UMTS LNA
13
Typ.
3.4
0.65
16.2
-8.7
-36
-9
1.0
8.7
-13
-14
-19
-15
>2.5
-7
-6
-5
3
T
Values
A
= 25 °C,
Max.
1880
1879.9
V
CC
Measured RF Characteristics Mid Band
= 2.8 V
Unit
MHz
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Electrical Characteristics
Note / Test Condition
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
50
50 , high gain mode
50 , low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
high gain mode
low gain mode
V3.0, 2008-08-26