huf75307p3 Fairchild Semiconductor, huf75307p3 Datasheet - Page 7

• Manufacturer Part Number: huf75307p3
• Description: 15a, 55v, 0.090 Ohm, N-channel Ultrafet Power Mosfets
• Manufacturer: Fairchild Semiconductor

PSPICE Electrical Model
.SUBCKT HUF75307 2 1 3 ;
CA 12 8 4.5e-10
CB 15 14 4.1e-10
CIN 6 8 2.154e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 56
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.97e-10
LSOURCE 3 7 2.39e-9
K1 LGATE LSOURCE 0.131
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1e-3
RGATE 9 20 1.9
RLDRAIN 2 5 10
RLGATE 1 9 60
RLSOURCE 3 7 24
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.5e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*35),4))}
.MODEL DBODYMOD D (IS=1.6e-13 RS=1.28e-2 IKF=5.5 N=0.985 TRS1=2.9e-3 TRS2=-4e-6 CJO=3.5e-10 TT=3.1e-8 M=0.45 XTI=6)
.MODEL DBREAKMOD D (RS=2.5e- 1IKF=0.1 TRS1=-4e- 3TRS2=3e-5)
.MODEL DPLCAPMOD D (CJO=5e-1 0IS=1e-3 0N=10 M=0.95)
.MODEL MMEDMOD NMOS (VTO=3.25 KP=2.2 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.9)
.MODEL MSTROMOD NMOS (VTO=3.75 KP=14.75 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MWEAKMOD NMOS (VTO=2.88 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=19 RS=0.1)
.MODEL RBREAKMOD RES (TC1=1.12e- 3TC2=1e-6)
.MODEL RDRAINMOD RES (TC1=2.3e-1 TC2=6e-4)
.MODEL RSLCMOD RES (TC1=4e-3 TC2=1e-6)
.MODEL RSOURCEMOD RES (TC1=1e-3 TC2=6e-6)
.MODEL RVTHRESMOD RES (TC=-3.31e-3 TC2=-1.49e-5)
.MODEL RVTEMPMOD RES (TC1=-1.4e- 3TC2=1e-9)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8.1 VOFF=-4)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-8.1)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0 VOFF=2)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2 VOFF=0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
rev June 1997
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
6
8
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
-
MSTRO
14
+
51
21
RSLC1
50
RDRAIN
ESLC
16
8
MMED
8
EBREAK
IT
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3