huf75307p3 Fairchild Semiconductor, huf75307p3 Datasheet - Page 3
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huf75307p3
Manufacturer Part Number
huf75307p3
Description
15a, 55v, 0.090 Ohm, N-channel Ultrafet Power Mosfets
Manufacturer
Fairchild Semiconductor
Datasheet
1.HUF75307P3.pdf
(10 pages)
Electrical Specifications
Source to Drain Diode Specifications
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
2
1
10
-5
TEMPERATURE
PARAMETER
25
PARAMETER
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
50
, CASE TEMPERATURE (
SINGLE PULSE
75
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
T
-4
C
= 25
100
o
C, Unless Otherwise Specified
125
SYMBOL
o
SYMBOL
C)
C
C
C
Q
OSS
V
RSS
ISS
t
SD
RR
rr
150
10
-3
t, RECTANGULAR PULSE DURATION (s)
V
f = 1MHz
(Figure 12)
I
I
I
DS
SD
SD
SD
175
= 25V, V
= 15A
= 15A, dI
= 15A, dI
TEST CONDITIONS
TEST CONDITIONS
GS
SD
SD
10
/dt = 100A/ s
/dt = 100A/ s
= 0V,
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
20
15
10
5
0
25
CASE TEMPERATURE
50
10
T
-1
C
, CASE TEMPERATURE (
75
NOTES:
DUTY FACTOR: D = t
PEAK T
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
MIN
-
-
-
MIN
-
-
-
J
= P
100
DM
TYP
TYP
-
-
-
250
100
x Z
25
10
P
0
125
DM
JC
1
/t
x R
2
o
MAX
C)
1.25
MAX
45
55
JC
t
-
-
-
1
150
t
+ T
2
C
UNITS
UNITS
nC
pF
pF
pF
ns
V
175
10
1