hufa76413dk8 Fairchild Semiconductor, hufa76413dk8 Datasheet - Page 8

• Manufacturer Part Number: hufa76413dk8
• Description: Hufa76413dk8t N-channel Logic Level Ultrafet? Power Mosfet 60v, 4.8a, 56mohm
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT HUFA76413DK8T 2 1 3 ;
CA 12 8 7.8e-10
CB 15 14 9.8e-10
CIN 6 8 5.8e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 67.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.34e-9
LSOURCE 3 7 0.59e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 22.5e-3
RGATE 9 20 2.2
RLDRAIN 2 5 10
RLGATE 1 9 13.4
RLSOURCE 3 7 5.9
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 15.3e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),2.5))}
.MODEL DBODYMOD D (IS = 8e-13 RS = 1.58e-2 TRS1 = 1e-3 TRS2 = 3e-6 XTI=3.2 CJO = 8e-10 TT = 3.2e-8 M = 0.54)
.MODEL DBREAKMOD D (RS = 1.18 TRS1 = 2e-3 TRS2 = -2.6e-5)
.MODEL DPLCAPMOD D (CJO = 5.7e-10 IS = 1e-30 N = 10 M = 0.87)
.MODEL MMEDMOD NMOS (VTO = 1.68 KP = 2 IS =1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.2)
.MODEL MSTROMOD NMOS (VTO = 2.05 KP =35 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.48 KP = 0.04 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.15e-3 TC2 = -7.5e-7)
.MODEL RDRAINMOD RES (TC1 = 8.5e-3 TC2 = 1.2e-5)
.MODEL RSLCMOD RES (TC1 = 3e-2 TC2 = 5.3e-7)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.4e-3 TC2 = -7e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.5e-3 TC2 = 2e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.0 VOFF= -1.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= -5.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.2 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.2)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
GATE
1
rev April 2002
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
RSLC2
6
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
+
-
MSTRO
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
MWEAK
17
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3
Rev. B