fds6b690s Fairchild Semiconductor, fds6b690s Datasheet - Page 5

• Manufacturer Part Number: fds6b690s
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS6690S.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 13. Non-SyncFET (FDS6690A) body
Figure 12. FDS6690S SyncFET body
diode reverse recovery characteristic.
diode reverse recovery characteristic.
10nS/DIV
10nS/DIV
(continued)
This diode
0V
0V
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
leakage versus drain-source voltage and
0.1
Figure 14. SyncFET body diode reverse
0
V
DS
, REVERSE VOLTAGE (V)
10
temperature.
125
25
o
o
C
C
20
FDS6680S Rev B (W)
30