fds6b690s Fairchild Semiconductor, fds6b690s Datasheet

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fds6b690s

Manufacturer Part Number
fds6b690s
Description
Manufacturer
Fairchild Semiconductor
Datasheet
FDS6690S
30V N-Channel PowerTrench SyncFET
General Description
The FDS6690S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
maximize power conversion efficiency, providing a low
R
an
monolithic SyncFET technology.
the FDS6690S as the low-side switch in a synchronous
rectifier is close to the performance of the FDS6690A in
parallel with a Schottky diode.
Applications
2000 Fairchild Semiconductor Corporation
DS(ON)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DC/DC converter
Motor drives
D
J
DSS
GSS
, T
JA
J C
Device Marking
integrated
STG
FDS6690S
and low gate charge. The FDS6690S includes
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Schottky
This 30V MOSFET is designed to
D
SO-8
D
D
diode
– Continuous
– Pulsed
FDS6690S
S
Device
The performance of
Parameter
S
using
S
G
Fairchild’s
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
10 A, 30 V.
Includes SyncFET Schottky diode
Low gate charge (11 nC typical)
High performance trench technology for extremely low
R
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
-55 to +150
12mm
R
R
Ratings
DS(ON)
DS(ON)
2.5
1.2
30
10
50
50
25
20
1
= 0.016
= 0.024
PRELIMINARY
4
3
2
1
@ V
@ V
May 2000
FDS6690S Rev B(W)
2500 units
GS
GS
Quantity
= 10 V
= 4.5 V
Units
C/W
C/W
W
V
V
A
C

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fds6b690s Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case J C Package Marking and Ordering Information Device Marking Device FDS6690S FDS6690S 2000 Fairchild Semiconductor Corporation ™ Features Includes SyncFET Schottky diode Fairchild’s Low gate charge (11 nC typical) High performance trench technology for extremely low ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...

Page 3

Typical Characteristics 10V GS 6.0V 5. DRAIN-SOURCE VOLTAGE ( Figure 1. On-Region Characteristics. 1 10A 10V GS 1.6 1.3 1 ...

Page 4

Typical Characteristics 10 I =10A GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 100ms 1s 1 10s 10V ...

Page 5

Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery ...

Page 6

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 7

... SOIC(8lds) Reel Configuration: Figure 4.0 Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0.05 +/-0 ...

Page 8

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ ...

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