mc9s08qg4 Freescale Semiconductor, Inc, mc9s08qg4 Datasheet - Page 270

no-image

mc9s08qg4

Manufacturer Part Number
mc9s08qg4
Description
Hcs08 Microcontrollers Microcontroller Family
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mc9s08qg4CDNE
Manufacturer:
VISHAY
Quantity:
6 000
Part Number:
mc9s08qg4CDTE
Manufacturer:
FREESCALE
Quantity:
5 000
Part Number:
mc9s08qg4CDTE
Manufacturer:
FREESCALE
Quantity:
5 000
Part Number:
mc9s08qg4CDTE
Manufacturer:
NXP
Quantity:
120
Part Number:
mc9s08qg4CDTE
Manufacturer:
NXP
Quantity:
1 896
Part Number:
mc9s08qg4CDTE
Manufacturer:
FREESCALE
Quantity:
20 000
Company:
Part Number:
mc9s08qg4CDTE
Quantity:
178
Part Number:
mc9s08qg4CDTER
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
mc9s08qg4CDTER
0
Part Number:
mc9s08qg4CPAE
Manufacturer:
MITSUBISHI
Quantity:
100
Part Number:
mc9s08qg4CPBE
Manufacturer:
AVX
Quantity:
60 000
Appendix A Electrical Characteristics
A.4
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
270
ESD Protection and Latch-Up Immunity
1
Latch-up
Machine
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Model
Human
Body
No.
1
2
3
4
Series resistance
Storage capacitance
Number of pulses per pin
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Human body model (HBM)
Machine model (MM)
Charge device model (CDM)
Latch-up current at T
Table A-4. ESD and Latch-Up Protection Characteristics
Table A-3. ESD and Latch-up Test Conditions
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 4
Description
Rating
1
A
= 125°C
Symbol
Symbol
V
V
V
I
R1
R1
HBM
CDM
LAT
C
C
MM
± 2000
± 200
± 500
± 100
Min
Value
1500
– 2.5
100
200
7.5
3
0
3
Max
Freescale Semiconductor
Unit
Unit
mA
pF
pF
Ω
Ω
V
V
V
V
V

Related parts for mc9s08qg4