mc9s08rd60fj Freescale Semiconductor, Inc, mc9s08rd60fj Datasheet - Page 209

• Manufacturer Part Number: mc9s08rd60fj
• Description: Hcs08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

C.4 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device data sheet at room temperature followed by hot temperature, unless specified otherwise in the
device data sheet.
C.5 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Low-voltage detection threshold
Power on reset (POR) voltage
Maximum low-voltage safe state re-arm
NOTES:
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to V
Low-voltage detection threshold
Freescale Semiconductor
1. If SAFE bit is set, V
0 < f
(LVD)
Bus
Table C-5 DC Characteristics (Temperature Range = –40 to 85 C Ambient)
< 8 MHz
Table C-4 DC Characteristics (Temperature Range = 0 to 70 C Ambient)
System.
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
MM circuit description
HBM circuit description
Parameter
Parameter
DD
must be above re-arm voltage to allow MCU to accept interrupts, refer to
Table C-3 ESD Protection Characteristics
Parameter
(V
(V
DD
DD
(1)
falling)
rising)
MC9S08RC/RD/RE/RG
DD
Symbol
Symbol
V
V
V
V
REARM
V
V
RAM
POR
LVD
LVD
DD
Symbol
V
V
THHBM
THMM
V
POR
SoC Guide — MC9S08RG60/D Rev 1.10
Min
1.82
1.90
Min
1.82
1.92
0.8
1.8
(1), (2)
Value
2000
200
Typical
Typical
1.875
2.24
1.88
1.96
0.9
5.6 Low-Voltage Detect
Unit
V
V
Max
Max
1.90
2.60
1.93
2.01
1.0
3.6
—
Unit
Unit
V
V
V
V
V
V
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