m58wr064kt Numonyx, m58wr064kt Datasheet - Page 99

• Manufacturer Part Number: m58wr064kt
• Description: 16-, 32-, 64-mbit ?16, Multiple Bank, Burst 1.8 V Supply Flash Memories
• Manufacturer: Numonyx

M58WRxxxKT, M58WRxxxKB
Table 40.
Offset
1Ch
1Dh
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
CFI query system interface information
000Ah
0017h
0020h
0085h
0095h
0004h
0000h
0000h
0003h
0000h
0002h
0000h
Data
V
V
V
V
Typical time-out per single byte/word program = 2
Typical time-out for multi-byte programming = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for multi-byte programming = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
Description
n
n
times typical
ms
n
times typical
n
n
ms
Common Flash interface
n
µs
n
n
times typical
µs
times typical
128µs
Value
1.7V
8.5V
9.5V
16µs
99/125
NA
NA
NA
NA
2V
1s
4s