m58wr064kt Numonyx, m58wr064kt Datasheet - Page 20

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m58wr064kt

Manufacturer Part Number
m58wr064kt
Description
16-, 32-, 64-mbit ?16, Multiple Bank, Burst 1.8 V Supply Flash Memories
Manufacturer
Numonyx
Datasheet

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Signal descriptions
2.13
2.14
2.15
Note:
20/125
V
V
voltage range applied to the pin.
If V
a voltage lower than V
V
the relevant values). V
in its value after the operation has started does not have any effect and program or erase
operations continue.
If V
stable until the program/erase algorithm is completed.
V
V
ground.
V
V
connected to V
Each device in a system should have V
capacitor close to the pin (high-frequency, inherently-low inductance capacitors should be
as close as possible to the package). See
PCB track widths should be sufficient to carry the required V
PP
PP
SS
SSQ
PP
SS
SSQ
PP
PP
in the V
is both a control input and a power supply pin. The two functions are selected by the
ground is the reference for the core supply, and must be connected to the system
ground is the reference for the input/output circuitry driven by V
is kept in a low voltage range (0 V to V
program supply voltage
is in the range of V
ground
ground
PP1
SS
range enables these functions (see Tables
PPLK
PP
PPH
is only sampled at the beginning of a program or erase; a change
provides absolute protection against program or erase, while
it acts as a power supply pin. In this condition V
DD
, V
Figure 11: AC measurement load
DDQ
DDQ
) V
and V
PP
is seen as a control input. In this case
PP
decoupled with a 0.1 µF ceramic
22
M58WRxxxKT, M58WRxxxKB
PP
and 23, DC characteristics for
program and erase currents.
DDQ
. V
SSQ
circuit. The
PP
must be
must be

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