m58wr064kt Numonyx, m58wr064kt Datasheet - Page 104

• Manufacturer Part Number: m58wr064kt
• Description: 16-, 32-, 64-mbit ?16, Multiple Bank, Burst 1.8 V Supply Flash Memories
• Manufacturer: Numonyx

Common Flash interface
Table 46.
1. The variable P is a pointer which is defined at CFI offset 15h.
2. Applies to M58WR016KT.
3. Applies to M58WR032KT.
4. Applies to M58WR064KT.
5. Bank Regions. There are two Bank Regions, see Tables 32, 33, 34, 35,
104/125
Offset
M58WR016KT,
M58WR032KT,
M58WR064KT
Bank and erase block region 1 information
Data
(P+2A)h = 63h
(P+2B)h = 64h
(P+2C)h = 65h
(P+2D)h = 66h
(P+2E)h = 67h
(P+28)h = 61h
(P+29)h = 62h
(P+2F)h = 68h
M58WR016KB,
M58WR032KB,
Offset
M58WR064KB
Data
06h
00h
00h
01h
64h
00h
01h
03h
Bank Region 1 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
Bank Regions 1 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
Bank Region 1 (Erase Block Type 2): page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(1)
36
(continued)
and 37.
Description
M58WRxxxKT, M58WRxxxKB