m58wr064kt Numonyx, m58wr064kt Datasheet - Page 106

• Manufacturer Part Number: m58wr064kt
• Description: 16-, 32-, 64-mbit ?16, Multiple Bank, Burst 1.8 V Supply Flash Memories
• Manufacturer: Numonyx

Common Flash interface
Table 47.
1. The variable P is a pointer which is defined at CFI offset 15h.
2. Applies to M58WR016KB.
3. Applies to M58WR032KB.
4. Applies to M58WR064KB.
5. Bank Regions. There are two Bank Regions, see Tables 32, 33, 34, 35,
106/125
(P+3C)h = 75h
(P+3D)h = 76h
(P+36)h = 6Fh
(P+37)h = 70h
(P+38)h = 71h
(P+39)h = 72h
(P+3A)h = 73h
(P+3B)h = 74h
(P+3E)h = 77h
(P+3F)h = 78h
Offset
M58WR016KT,
M58WR032KT,
M58WR064KT
Bank and Erase block region 2 information
Data
07h
00h
20h
00h
64h
00h
01h
03h
(P+3E)h = 77h
(P+3F)h = 78h
Offset
M58WR016KB,
M58WR032KB,
M58WR064KB
Data
Bank Region 2 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Minimum block erase cycles × 1000
Bank Region 2 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
Bank Region 2 (Erase Block Type 2): page mode and
synchronous mode capabilities (defined in
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
Feature Space definitions
Reserved
Bank Region 2 (Erase Block Type 2)
(1)
36
(continued)
and 37.
Description
M58WRxxxKT, M58WRxxxKB
Table
44)