s908ab32ag0cfue Freescale Semiconductor, Inc, s908ab32ag0cfue Datasheet - Page 71

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s908ab32ag0cfue

Manufacturer Part Number
s908ab32ag0cfue
Description
M68hc08 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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5.4 Functional Description
5.5 EEPROM Configuration
MC68HC908AB32
Freescale Semiconductor
* Non-volatile EEPROM register; write by programming.
$FE1F
Configuration Register
EEPROM Array
(EEACR)
Rev. 1.1
The 512 bytes of EEPROM is located at $0800–$09FF, and can be
programmed or erased without an additional external high voltage
supply. The program and erase operations are enabled through the use
of an internal charge pump. For each byte of EEPROM, the write/erase
endurance is 10,000 cycles.
The 8-bit EEPROM non-volatile register (EENVR) and the 16-bit
EEPROM timebase divider non-volatile register (EEDIVNVR) contain
the default settings for the following EEPROM configurations:
EENVR and EEDIVNVR are non-volatile, EEPROM registers. They are
programmed and erased in the same way as EEPROM bytes. The
contents of these registers are loaded into their respective volatile
registers during a MCU reset. The values in these read/write, volatile
registers define the EEPROM configurations.
For EENVR, the corresponding volatile register is the EEPROM array
configuration register (EEACR).
Figure 5-1. EEPROM I/O Register Summary
Reset:
Read:
Write:
Security option
Block protection
EEPROM timebase reference
CON3
= Unimplemented
CON2
EEPROM
CON1
Contents of EENVR ($FE1C)
EEPRTCT
EEBP3
R
= Reserved
EEBP2
EEBP1
Technical Data
EEPROM
EEBP0
71

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