s908ab32ag0cfue Freescale Semiconductor, Inc, s908ab32ag0cfue Datasheet - Page 60

• Manufacturer Part Number: s908ab32ag0cfue
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

FLASH Memory
4.4 FLASH Control Register
Technical Data
60
NOTE:
Address:
page. Hence the minimum erase page size is 128 bytes. Program and
erase operations are facilitated through control bits in the FLASH Control
Register (FLCR). Details for these operations appear later in this
section. The address ranges for the user memory and vectors are:
Programming tools are available from Freescale. Contact your local
Freescale representative for more information.
A security feature prevents viewing of the FLASH contents.
The FLASH control register (FLCR) controls FLASH program and erase
operations.
HVEN — High-Voltage Enable Bit
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or
copying the FLASH difficult for unauthorized users.
Reset:
Read:
Write:
•
•
•
•
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
$8000–$FDFF; user memory.
$FF7E; FLASH block protect register.
$FE08
$FFDC–$FFFF; these locations are reserved for user-defined
interrupt and reset vectors.
$FE08
Bit 7
0
0
Figure 4-1. FLASH Control Register (FLCR)
;
FLASH control register.
FLASH Memory
6
0
0
5
0
0
4
0
0
HVEN
3
0
MC68HC908AB32
MASS
Freescale Semiconductor
2
0
ERASE
1
0
1
—
Rev. 1.1
PGM
Bit 0
0