st10f273m STMicroelectronics, st10f273m Datasheet - Page 136

• Manufacturer Part Number: st10f273m
• Description: 16-bit Mcu With 512 Kbyte Flash Memory And 36 Kbyte Ram
• Manufacturer: STMicroelectronics

Electrical characteristics
24.6
136/182
Flash characteristics
V
Table 58.
1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2. Word and Double Word Programming times are provided as average values derived from a full sector
3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the
4. Not 100% tested, guaranteed by Design Characterization
Word program (32-bit)
Double word program
(64-bit)
Bank 0 program (512K)
(double word program)
Sector erase (8K)
Sector erase (32K)
Sector erase (64K)
Bank 0 erase (512K)
Recovery from power-down
(t
Program suspend latency
Erase suspend latency
Erase suspend request rate
Set protection
DD
PD
programming time: The absolute value of a Word or Double Word Programming time could be longer than
the average value.
Bank). As ST10F273M implements only one bank, the Bank Erase operation is equivalent to Module and
Chip Erase operations.
)
= 5V ± 10%, V
(2)
Parameter
Flash characteristics
(4)
SS
(3)
(2)
(4)
= 0V
(4)
(4)
0 cycles
T
Typical
A
11.2
= 25°C
3.9
0.6
0.5
1.1
0.8
1.7
1.3
8.0
35
60
20
40
-
-
-
(1)
0 cycles
27.2
23.9
150
170
9.9
0.9
0.8
2.0
1.8
3.7
3.3
80
40
10
30
20
T
Maximum
A
(1)
= 125°C
cycles
100k
37.3
38.4
35.1
290
570
170
1.0
0.9
2.7
2.5
5.1
4.7
40
10
30
20
Unit
ms
µs
µs
µs
µs
µs
µs
s
s
s
s
s
–
–
–
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
(4)
Minimum delay
between 2 requests
Notes
ST10F273M