TIM5964-4UL Toshiba, TIM5964-4UL Datasheet
TIM5964-4UL
Specifications of TIM5964-4UL
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TIM5964-4UL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-4UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
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... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-4UL SYMBOL ...
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... RF PERFORMANCE 10V DS ≅ Pin= 26.5dBm 5.7 5 6.15GHz V = 10V ≅ TIM5964-4UL Output Power vs. Frequency 5.9 6 6.1 6.2 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 6.3 6.4 6.5 6 ...
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... TIM5964-4UL Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics - 10V DS ≅ 6.15GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 Tc (℃ 200 ...