MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 64

• Manufacturer Part Number: MT29F16G08FAAWC
• Description: NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Table 19:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Symbol
NOP
t
t
t
t
t
t
BERS
CBSY
DBSY
LPROG
OBSY
PROG
Parameter
Number of partial page programs
BLOCK ERASE operation time
Busy time for PROGRAM CACHE operation
Busy time for TWO-PLANE PROGRAM PAGE operation
LAST PAGE PROGRAM operation time
Busy time for OTP DATA PROGRAM operation if OTP is protected
PAGE PROGRAM operation time
PROGRAM/ERASE Characteristics
Notes:
1. Four total partial-page programs to the same page.
2.
3.
4. Typical
t
t
address load time (last page) - data load time (last page).
CBSY MAX time depends on timing between internal program completion and data-in.
LPROG =
t
PROG time may increase for two-plane operations.
t
PROG (last page) +
64
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
t
PROG (last - 1 page) - command load time (last page) -
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Typ
220
1.5
0.5
3
–
–
–
Electrical Characteristics
Max
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600
600
25
4
2
1
–
cycles
Unit
ms
µs
µs
µs
µs
–
Notes
1
2
3
4