MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 49

• Manufacturer Part Number: MT29F16G08FAAWC
• Description: NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Figure 38:
Interleaved TWO-PLANE PROGRAM PAGE Operations
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
80h
Address
Interleaved PROGRAM PAGE CACHE MODE Operation with Status Register Monitoring
Die 1
Data
15h
Figure 39 on page 50 and Figure 40 on page 51 show how to perform two types of inter-
leaved TWO-PLANE PROGRAM PAGE operations. In Figure 39, the R/B# signal is moni-
tored for operation completion. In Figure 40, the TWO-PLANE/MULTIPLE-DIE READ
STATUS (78h) command is used to monitor the status register for operation completion.
The interleaved TWO-PLANE PROGRAM PAGE operation must meet two-plane
addressing requirements. See “Two-Plane Addressing” on page 35 for details.
RANDOM DATA INPUT (85h) is permitted during interleaved TWO-PLANE PROGRAM
PAGE operations.
80h
Address
Die 2
Data
15h
49
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
78h
Address
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Die 1
Status
80h
Command Definitions
Address
Die 1
©2006 Micron Technology, Inc. All rights reserved.
Data
15h