MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 21

• Manufacturer Part Number: MT29F16G08FAAWC
• Description: NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

READ Operations
PAGE READ 00h-30h
Figure 12:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
00h
PAGE READ Operation
At power-on, the device defaults to READ mode. To enter READ mode while in opera-
tion, write the 00h command to the command register, then write 5 ADDRESS cycles,
and conclude with the 30h command.
To determine the progress of the data transfer from the NAND Flash array to the data
register (
command. If the READ STATUS command is used to monitor the data transfer, the user
must reissue the READ (00h) command to receive data output from the data register. See
Figure 65 on page 72 and Figure 66 on page 73 for examples. After the READ command
has been reissued, pulsing the RE# line will result in outputting data, starting from the
initial column address.
A serial page read sequence outputs a complete page of data. After 30h is written, the
page data is transferred to the data register, and R/B# goes LOW during the transfer.
When the transfer to the data register is complete, R/B# returns HIGH. At this point, data
can be read from the device. Starting from the initial column address and going to the
end of the page, read the data by repeatedly pulsing RE# at the maximum
Figure 12).
Address (5 cycles)
t
R), monitor the R/B# signal or, alternatively, issue a READ STATUS (70h)
21
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
30h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t R
Data output ( serial access)
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
t
RC rate (see
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