MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 57

• Manufacturer Part Number: MT29F16G08FAAWC
• Description: NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

WRITE PROTECT Operation
Figure 48:
Figure 49:
Figure 50:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
ERASE Enable
ERASE Disable
PROGRAM Enable
It is possible to enable and disable PROGRAM and ERASE commands using the WP# pin.
Figures 48 through 51 illustrate the setup time (
PROGRAM or ERASE command is latched into the command register. After command
cycle 1 is latched, the WP# pin must not be toggled until the command is complete and
the device is ready (status register bit 5 is “1”).
WE#
WP#
WE#
WP#
WE#
WP#
R/B#
R/B#
R/B#
I/Ox
I/Ox
I/Ox
t WW
t WW
t WW
60h
60h
80h
57
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
D0h
D0h
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WW) required from WP# toggling until a
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.