MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 44

• Manufacturer Part Number: MT29F16G08FAAWC
• Description: NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Figure 31:
Figure 32:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
R/B#
R/B#
R/B#
R/B#
I/Ox
I/Ox
I/Ox
I/Ox
1
t DBSY
1
00h
00h
(or 81h)
80h
(or 81h)
Address (5 cycles)
1st-plane source
TWO-PLANE INTERNAL DATA MOVE Operation
TWO-PLANE INTERNAL DATA MOVE Operation with RANDOM DATA INPUT
80h
Address (5 cycles)
1st-plane source
2nd-plane destination
Address (5 cycles)
2nd-plane destination
Address (5 cycles)
00h
00h
Address (5 cycles)
2nd-plane source
10h
Optional
Data
Address (5 cycles)
2nd-plane source
t PROG
85h
Address (2 cycles)
Unlimited number
70h
35h
of repetitions
35h
t R
85h
44
Status
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
t R
1st-plane destination
Data
Address (5 cycles)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10h
85h
1st-plane destination
t PROG
Address (5 cycles)
Optional
Data
85h
70h
Command Definitions
Address (2 cycles)
Unlimited number
of repetitions
11h
©2006 Micron Technology, Inc. All rights reserved.
Status
t DBSY
Data
11h
1
1