SFM9014 Fairchild Semiconductor, SFM9014 Datasheet - Page 2

• Manufacturer Part Number: SFM9014
• Description: Advanced Power MOSFET
• Manufacturer: Fairchild Semiconductor

SFM9014
Symbol
O
O
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
O
O
O
1
2
4
5
R
3
BV
BV/ T
V
Notes ;
C
t
t
V
I
I
C
C
GS(th)
Q
Q
I
Q
DS(on)
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=40mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle
Essentially Independent of Operating Temperature
d(on)
d(off)
Q
GSS
DSS
g
I
SM
t
SD
t
SD
t
S
rr
oss
DSS
iss
rss
fs
gd
r
f
gs
rr
g
_ <
J
-6.7A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=-1.8A, V
_ <
200A/ s, V
Characteristic
Characteristic
DD
=-25V, R
DD
G
_ <
=27
BV
(T
DSS
*
, Starting T
C
=25
, Starting T
O
O
_ <
4
1
o
C unless otherwise specified)
2%
Min.
Min.
-2.0
-60
J
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25
J
=25
o
-0.05
C
Typ.
Typ.
1.43
0.17
270
1.8
4.2
o
90
25
10
19
21
16
75
--
--
--
--
--
--
--
--
--
--
9
C
Max. Units
Max. Units
-100
-100
-4.0
100
350
135
-1.8
-3.8
0.5
-10
-14
35
30
50
50
40
11
--
--
--
--
--
--
--
V/
nA
nC
pF
ns
ns
V
V
A
V
S
o
A
C
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=-250 A
G
=-6.7A
F
=25
=25
/dt=100A/ s
=24
=-5V,I
=-60V
=-48V,T
=-30V,I
=-48V,V
=0V,I
=-20V
=20V
=-10V,I
=0V,V
=-30V,I
See Fig 13
Test Condition
Test Condition
o
o
C,I
C,I
See Fig 5
POWER MOSFET
D
D
S
F
DS
=-250 A
=-6.7A
=-250 A
=-1.8A,V
D
D
D
P-CHANNEL
C
GS
=-25V,f =1MHz
=-0.9A
=-0.9A
=-6.7A,
=125
=-10V,
See Fig 7
o
C
GS
O
O
=0V
4
4
O
O
O
O
O
5
5
4
4
4