SFM9014 Fairchild Semiconductor, SFM9014 Datasheet

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SFM9014

Manufacturer Part Number
SFM9014
Description
Advanced Power MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
Advanced Power MOSFET
*
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 A (Max.) @ V
! Lower R
Absolute Maximum Ratings
Thermal Resistance
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
J
dv/dt
R
V
V
E
E
, T
I
I
P
T
I
DM
AR
DSS
D
GS
AS
AR
L
D
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.362
Junction-to-Ambient
(Typ.)
Characteristic
Characteristic
*
A
=25
A
A
=25
=70
*
o
C)
DS
o
o
C)
C)
*
= -60V
O
O
O
O
O
2
1
1
1
3
Typ.
--
- 55 to +150
0.022
0.28
Value
300
-1.8
-1.1
110
-1.8
-5.5
-60
-14
2.8
BV
R
I
!"
1. Gate 2. Drain 3. Source
D
SOT-223
DS(on)
= -1.8 A
DSS
SFM9014
Max.
1
45
= 0.5
= -60 V
3
2
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
V
A
A
V
A
C
Rev. B
o
C

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SFM9014 Summary of contents

Page 1

... Symbol When mounted on the minimum pad size recommended (PCB Mount). = -60V DS (Typ.) Characteristic Characteristic * Junction-to-Ambient SFM9014 BV = -60 V DSS R = 0.5 DS(on -1 SOT-223 Gate 2. Drain 3. Source Value -60 -1.8 -1.1 1 -14 !" 2 110 1 -1.8 1 0.28 3 -5.5 2.8 0.022 ...

Page 2

... SFM9014 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... SFM9014 Fig 2. Transfer Characteristics ...

Page 4

... SFM9014 Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on ...

Page 5

... Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT V DS DUT Current Sampling ( Resistor 0.5 rated DUT DUT SFM9014 -10V Charge d(on 10% 90% V out BV 1 ---- 2 -------------------- E = ...

Page 6

... SFM9014 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) DUT ) DUT ) + V DS DUT -- I S Driver Compliment of DUT G (N-Channel) • dv/dt controlled by “R • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period Body Diode Reverse Current ...

Page 7

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