LM3S6110 Luminary Micro, Inc, LM3S6110 Datasheet - Page 437
LM3S6110
Manufacturer Part Number
LM3S6110
Description
Lm3s6110 Arm Microcontroller
Manufacturer
Luminary Micro, Inc
Datasheet
1.LM3S6110.pdf
(472 pages)
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19.1.5
July 25, 2008
Table 19-4. Detailed Power Specifications
a. Pending characterization completion.
Flash Memory Characteristics
Table 19-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
I
Parameter
DD_DEEPSLEEP
Parameter
T
I
PE
T
DD_SLEEP
T
I
ERASE
T
DD_RUN
PROG
RET
ME
CYC
Parameter Name
Number of guaranteed program/erase cycles before failure
Data retention at average operating temperature of 85˚C (industrial) or 105˚C
(extended)
Word program time
Page erase time
Mass erase time
Parameter Name
Run mode 1 (Flash
loop)
Run mode 2 (Flash
loop)
Run mode 1 (SRAM
loop)
Run mode 2 (SRAM
loop)
Sleep mode
Deep-Sleep mode
Conditions
V
Code= while(1){} executed in Flash
Peripherals = All ON
System Clock = 25 MHz (with PLL)
V
Code= while(1){} executed in Flash
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
V
Code= while(1){} executed in SRAM
Peripherals = All ON
System Clock = 25 MHz (with PLL)
V
Code= while(1){} executed in SRAM
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
V
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
LDO = 2.25 V
Peripherals = All OFF
System Clock = IOSC30KHZ/64
DD25
DD25
DD25
DD25
DD25
= 2.50 V
= 2.50 V
= 2.50 V
= 2.50 V
= 2.50 V
Preliminary
a
Nom
3.3 V V
4.6
48
48
5
5
5
V
DDPHY
DD
pending
pending
pending
pending
pending
pending
, V
LM3S6110 Microcontroller
Max
10,000
DDA
Min
200
10
20
20
,
a
a
a
a
a
a
100,000
Nom
0.21
64
33
56
26
12
Nom
2.5 V V
-
-
-
-
pending
pending
pending
pending
pending
pending
Max
Max
DD25
-
-
-
-
-
a
a
a
a
a
a
cycles
years
Unit
ms
ms
Unit
µs
mA
mA
mA
mA
mA
mA
437
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