FQU1N80 Fairchild Semiconductor, FQU1N80 Datasheet - Page 3

• Manufacturer Part Number: FQU1N80
• Description: 800V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
250
200
150
100
10
10
10
50
50
40
30
20
10
0
-1
-2
10
0
10
0.0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 5.5 V
Figure 1. On-Region Characteristics
0.2
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
0.4
V
V
0.6
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
, Drain Current [A]
0
0
0.8
V
GS
= 20V
1.0
C
C
C
oss
V
iss
rss
GS
= 10V
1.2
C
C
C
1.4
iss
oss
rss
※ Notes :
= C
= C
= C
10
10
1. 250μ s Pulse Test
2. T
※ Note : T
gs
gd
ds
1
1
C
+ C
+ C
= 25℃
1.6
※ Notes :
gd
gd
1. V
2. f = 1 MHz
(C
ds
J
GS
= 25℃
= shorted)
1.8
= 0 V
2.0
10
10
10
10
12
10
8
6
4
2
0
-1
-1
0
0
0.2
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current
1
25
0.4
o
C
4
150
V
V
Q
and Temperature
V
GS
SD
o
C
DS
G
V
150℃
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
2
, Total Gate Charge [nC]
DS
V
= 640V
DS
= 400V
0.6
= 160V
3
6
25℃
-55
o
C
0.8
4
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.0
= 50V
= 0V
5
D
= 1.0 A
Rev. A1. May 2001
1.2
10
6