FQU1N80 Fairchild Semiconductor, FQU1N80 Datasheet
FQU1N80
Manufacturer Part Number
FQU1N80
Description
800V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
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©2001 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.0A, 800V, R
• Low gate charge ( typical 5.5nC)
• Low Crss ( typical 2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
FQD1N80 / FQU1N80
DS(on)
Typ
--
--
--
-55 to +150
= 20
0.63
0.36
300
800
1.0
4.0
1.0
4.5
4.0
2.5
90
45
30
@V
G
!
!
GS
Max
2.78
110
50
QFET
= 10 V
! "
! "
!
!
!
!
S
D
"
"
"
"
"
"
May 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM
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