FDS6990 Fairchild Semiconductor, FDS6990 Datasheet - Page 5

• Manufacturer Part Number: FDS6990
• Description: Dual N-Channel Logic Level PowerTrenchTM MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS6990S.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6990A).
Figure 13. Non-SyncFET (FDS6990A) body
Figure 12. FDS6990S SyncFET body
diode reverse recovery characteristic.
diode reverse recovery characteristic.
10ns/div
10ns/div
(continued)
This diode
0V
0V
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage.
increase the power in the device.
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0.00001
0.0001
0.001
0.01
0.1
0
V
DS
, REVERSE VOLTAGE (V)
10
125
25
o
o
C
C
20
FDS6990S Rev B (W)
This will
30