FDS6990 Fairchild Semiconductor, FDS6990 Datasheet
FDS6990
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FDS6990 Summary of contents
Page 1
... R and low gate charge. DS(ON) includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode. Applications DC/DC converter Motor drives D1 ...
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... C 17 =125 1233 344 106 2.9 0.5 0.7 (Note 2) 17 (Note 3) 12.5 c) 135°C/W when mounted on a minimum pad. FDS6990S Rev B ( ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.5V 5.0V 6.0V 8.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6990S Rev B ( 0.8 ...
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... V , DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 1000 FDS6990S Rev B (W) ...
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... For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A). 10ns/div Figure 13. Non-SyncFET (FDS6990A) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at This diode high temperature and high reverse voltage. ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...