FDS6990 Fairchild Semiconductor, FDS6990 Datasheet - Page 2

• Manufacturer Part Number: FDS6990
• Description: Dual N-Channel Logic Level PowerTrenchTM MOSFET
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
the drain pins. R
DSS
GSSF
GSSR
D(on)
S
d(on)
r
d(off)
f
rr
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
JA
T
GS(th)
T
DSS
J
J
is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
Parameter
a)
(Note 2)
78°C/W when
mounted on a
0.5in
oz copper
2
(Note 2)
pad of 2
CA
is determined by the user's board design.
T
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
d
A
D
D
F
iF
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
= 10A
= 1 mA, Referenced to 25 C
= 1 mA, Referenced to 25 C
/d
= 0 V, I
= 24 V,
= 20 V,
= –20 V
= V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V,
= 15 V,
= 15 V,
= 15 V,
= 10 V,
= 15 V,
= 5 V
= 0 V,
t
= 300 A/µs
Test Conditions
GS
b)
, I
D
D
D
D
= 1 mA
= 1 mA
I
D
125°C/W when
mounted on a
0.02 in
2 oz copper
S
= 7.5 A
= 7.5 A, T
= 6.5 A
= 2.9 A
V
V
V
V
I
GS
DS
D
V
I
I
R
DS
D
D
GS
DS
GEN
= 10 A,
2
= 0 V
= 0 V
= 10 A
= 1 A,
pad of
= 0 V
= 0 V,
= 5 V
= 6
J
=125 C
(Note 2)
(Note 3)
Min
30
20
1
Typ Max Units
1233
17.5
12.5
344
106
2.2
0.5
c)
23
–6
27
24
22
25
11
11
17
8
5
5
4
135°C/W when
mounted on a
minimum pad.
–100
500
100
2.9
0.7
22
35
30
16
10
40
20
16
3
FDS6990S Rev B (W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A