MIL-PRF-19500 STMicroelectronics, MIL-PRF-19500 Datasheet - Page 12

• Manufacturer Part Number: MIL-PRF-19500
• Description: SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC
• Manufacturer: STMicroelectronics

See footnote at end of table.
Subgroup 1 2/
Visual and mechanical
examination 3/
Solderability 3/ 4/
Resistance to solvents 3/ 4/ 5/
Temperature cycling 3/ 4/
Electrical measurements 4/
Bond strength 3/ 4/
Subgroup 2
Collector to emitter breakdown
voltage
Collector to base cutoff current
Emitter to base cutoff current
Collector to base cutoff current
Collector to emitter cutoff
current
Emitter to base cutoff current
Collector to emitter cutoff
current
Forward-current transfer ratio
Hermetic seal 4/
Fine leak
Gross leak
Inspection 1/
Method
2071
2026
1022
1051
1071
2037
3011
3036
3061
3036
3041
3061
3041
3076
n = 45 devices, c = 0
n = 15 leads, c = 0
n = 15 devices, c = 0
Test condition C, 25 cycles.
n = 22 devices, c = 0
n = 22 devices, c = 0
Group A, subgroup 2
Precondition T
t = 24 hrs or T
t = 2 hrs; n = 11 wires, c = 0
Bias condition D; I
pulsed (see 4.5.1)
Bias condition D; V
Bias condition D; V
Bias condition D; V
Bias condition D; V
Bias condition D; V
Bias condition C; V
V
TABLE I. Group A inspection.
CE
MIL-STD-750
= 5 V dc; I
MIL-PRF-19500/376E
Conditions
A
A
C
= +250 C at
= 300 C at
= 1 A dc
12
C
CB
EB
CB
CE
EB
CE
= 10 mA dc
= 60 V dc
= 6 V dc
= 5 V dc
= 45 V dc
= 5 V dc
= 45 V dc
V
Symbol
(BR)CEO
I
I
I
I
I
h
I
CBO1
EBO1
CBO2
EBO2
CEO
CES
FE1
Min
60
45
Limit
Max
10
10
5
2
2
5
nA dc
nA dc
nA dc
nA dc
V dc
Unit
A dc
A dc